i f(av) sinusoidal waveform 10 a v rrm 1200 v i fsm 160 a v f @ 10 a, t j = 25c 1.33 v t rr @ 1a, 100a/s 80 ns t j - 40 to 150 c major ratings and characteristics characteristics va lues units description/ features the 10etf12pbf fast soft recovery quiet ir rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. the glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. typical applications are both: output rectification and freewheeling in inverters, choppers and converters and input rectifications where severe restrictions on conducted emi should be met. to-220ac package outline 1 bulletin i2188 12/04 quiet ir series 10etf12pbf v f < 1.33v @ 10a t rr = 80ns v rrm = 1200v fast soft recovery rectifier diode lead-free ("pbf" suffix) www.irf.com
2 10etf12pbf quiet ir series bulletin i2188 12/04 www.irf.com i f(av) max. average forward current 10 a @ t c = 125 c, 180 conduction half sine wave i fsm max. peak one cycle non-repetitive 160 10ms sine pulse, rated v rrm applied surge current 185 10ms sine pulse, no voltage reapplied i 2 t max. i 2 t for fusing 128 10ms sine pulse, rated v rrm applied 180 10ms sine pulse, no voltage reapplied i 2 t max. i 2 t for fusing 1800 a 2 s t = 0.1 to 10ms, no voltage reapplied part number v rrm , maximum v rsm , maximum non repetitive i rrm peak reverse voltage peak reverse voltage 150c vvma 10etf12 1200 1300 4 voltage ratings absolute maximum ratings electrical specifications recovery characteristics parameters 10etf.. units conditions a a 2 s v fm max. forward voltage drop 1.33 v @ 10a, t j = 25c r t forward slope resistance 22.9 m ? t j = 150c v f(to) threshold voltage 0.96 v i rm max. reverse leakage current 0.1 t j = 25 c 4t j = 150 c parameters 10etf.. units conditions v r = rated v rrm ma t rr reverse recovery time 310 ns i f @ 10apk i rr reverse recovery current 4.7 a @ 25a/ s q rr reverse recovery charge 1.05 c @ 25c s typical snap factor 0.6 parameters 10etf.. units conditions
3 10etf12pbf quiet ir series bulletin i2188 12/04 www.irf.com t j max. junction temperature range - 40 to 150 c t stg max. storage temperature range - 40 to 150 c r thjc max. thermal resistance junction 1.5 c/w dc operation to case r thja max. thermal resistance junction 62 c/w to ambient r thcs typical thermal resistance, case to 0.5 c/w mounting surface , smooth and greased heatsink wt approximate weight 2 (0.07) g (oz.) t mounting torque min. 6 (5) max. 12 (10) case style to-220ac jedec marking device 10etf12 thermal-mechanical specifications parameters 10etf.. units conditions kg-cm (ibf-in) fig. 1 - current rating characteristics fig. 2 - current rating characteristics fig. 3 - forward power loss characteristics fig. 4 - forward power loss characteristics 115 120 125 130 135 140 145 150 024681012 30 60 90 120 180 maximum allowable case temperature (c) cond uction angle average forward current (a) 10etf.. series r (dc) = 1.5 c/ w thjc 115 120 125 130 135 140 145 150 0 2 4 6 8 10121416 dc 30 60 90 120 180 maximum allowable case temperature (c) conduction period average forward current (a) 10etf.. series r (dc) = 1.5 c/ w thjc 0 2 4 6 8 10 12 14 16 0246810 rm s li m i t 180 120 90 60 30 conduction angle average forward current (a) maximum average forward power loss (w) 10.tf.. series t = 150c j 0 4 8 12 16 20 24 0 2 4 6 8 10 12 14 16 dc 180 120 90 60 30 rm s lim i t conduction period average forward current (a) maximum average forward power loss (w) 10etf.. series t = 150c j
4 10etf12pbf quiet ir series bulletin i2188 12/04 www.irf.com fig. 8 - recovery time characteristics, t j = 25c fig. 9 - recovery time characteristics, t j = 150c fig. 7 - forward voltage drop characteristics fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current 40 60 80 100 120 140 160 180 110100 numb er of eq ua l a mp lit ude ha lf cyc le current pulses (n) peak half sine wave forward current (a) init ia l t = 150c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j at any rated load condition and with rated v applied following surge. rrm 10etf.. series 40 60 80 100 120 140 160 180 200 0.01 0.1 1 pulse train duration (s) peak half sine wave forward current (a) versus pulse train duration. initial t = 150c no voltage reapplied rated v reapplied rrm j maximum non repetitive s urge current 10etf.. series 1 10 100 1000 0.5 1 1.5 2 2.5 3 3.5 4 4.5 t = 2 5 c instantaneous forward current (a) instantaneous forward voltage (v) t = 150c j j 10etf.. series 0 0.1 0.2 0.3 0.4 0.5 0.6 0 40 80 120 160 200 ra te of fa ll of forwa rd current - d i/ d t (a/ s) 1 a 5 a ma ximum reve rse rec o ve ry time - trr (s) 8 a 2 a i = 10 a fm 10etf.. series t = 25 c j 0 0.2 0.4 0.6 0.8 0 40 80 120 160 200 rate of fall of forward current - di/ dt (a/ s) 1 a 5 a ma ximum reverse rec overy time - trr (s) i = 10 a fm 2 a 8 a 10etf.. series t = 150 c j
5 10etf12pbf quiet ir series bulletin i2188 12/04 www.irf.com fig. 14 - thermal impedance z thjc characteristics fig. 12 - recovery current characteristics, t j = 25c fig. 13 - recovery current characteristics, t j = 150c fig. 10 - recovery charge characteristics, t j = 25c fig. 11 - recovery charge characteristics, t j = 150c 0 0.4 0.8 1.2 1.6 2 0 40 80 120 160 200 rate of fall of forward current - di/dt (a/s) 1 a 5 a maximum reverse recovery charge - qrr (c) i = 10 a fm 2 a 8 a 10etf.. se rie s t = 2 5 c j 0 1 2 3 4 5 0 40 80 120 160 200 rate of fall of forward current - di/dt (a/s) 1 a 5 a maximum reverse recovery charge - qrr (c) i = 10 a fm 2 a 8 a 10etf.. series t = 150 c j 0 4 8 12 16 20 0 40 80 120 160 200 ma ximum re ve rse rec o very curre nt - irr (a) rate of fall of forward current - di/dt (a/s) 1 a 5 a 8 a 2 a i = 10 a fm 10etf.. series t = 2 5 c j 0 5 10 15 20 25 0 40 80 120 160 200 maximum re verse reco very curre nt - irr (a) rate of fall of forward current - di/dt (a/s) 1 a 5 a i = 10 a fm 8 a 2 a 10etf.. series t = 150 c j 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 square wave pulse duration (s) steady state value (dc operation) sing le pulse thjc transient thermal impedance z (c/w) d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 10etf.. s eries
6 10etf12pbf quiet ir series bulletin i2188 12/04 www.irf.com 3.78 (0.15) 3.54 (0.14) 10.54 (0.41) max. dia. 15.24 (0.60) 14.84 (0.58) 2.92 (0.11) 2.54 (0.10) 1 term 2 14.09 (0.55) 13.47 (0.53) 3.96 (0.16) 3.55 (0.14) 0.94 (0.04) 0.69 (0.03) 4.57 (0.18) 4.32 (0.17) 3 0.61 (0.02) max. 5.08 (0.20) ref. 1.32 (0.05) 1.22 (0.05) 6.48 (0.25) 6.23 (0.24) 2 0.10 (0.004) 1.40 (0.05) 1.15 (0.04) 2.89 (0.11) 2.64 (0.10) 1 3 2.04 (0.080) max. outline table dimensions in millimeters and inches 2 lot code assembly rectifier international irmx assembly line example: assembled on ww 19, 2001 in the assembly line "c" lot code 1789 logo p = lead-free part number week 19 year 1 = 2001 date code this is a 10etf12 part marking information anode 1 3 cathode base cathode 2
7 10etf12pbf quiet ir series bulletin i2188 12/04 www.irf.com ordering information table 10 e t f 12 pbf device code 1 5 24 3 1 - current rating (10 = 10a) 2 - circuit configuration: e = single diode 3 - package: t = to-220ac 4 - type of silicon: f = fast soft recovery rectifier 5 - voltage rating (12 = 1200v) 6 - y none = standard production y pbf = lead-free 6 ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7309 visit us at www.irf.com for sales contact information. 12/04 data and specifications subject to change without notice. this product has been designed and qualified for industrial level and lead-free. qualification standards can be found on ir's web site. 6
|
